MasterGaN series – high voltage half-bridge gate driver with embedded GaN FETs

The MasterGaN series is an advanced 600 V power system-in-package integrating a gate driver and two enhancement mode GaN transistors in half-bridge configuration. The integrated power GaNs feature 650 V drain-source breakdown voltage, while the High side of the embedded gate driver can be easily supplied by the integrated bootstrap diode. The MasterGaN series allows far greater power supply efficiency and higher power density to drastically reduce the cost of ownership.

The greater power density can help designers develop fast chargers and USB-PD adapters as much as four times smaller and three times lighter.

Thanks to the superior efficiency and frequency performance with respect to conventional Si MOSFET, heatsinks can be either eliminated or heavily reduced in size, translating into immediate weight reduction benefits for fast chargers, USB-PD adapters, LED lighting drivers, TV power supplies and server/telecom power supply designs.

MasterGaN1 – description

The MasterGaN1 is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN transistors in half‑bridge configuration. The integrated power GaNs have RDS(ON) of 150 mand 650 V drain‑source breakdown voltage, while the High-side of the embedded gate driver can be easily supplied by the integrated bootstrap diode.

The MasterGaN1 features UVLO protection on both the lower and upper driving sections, preventing the power switches from operating in low efficiency or dangerous conditions, and the interlocking function avoids cross-conduction conditions.

The input pins extended range allows easy interfacing with microcontrollers, DSP units or Hall effect sensors.

 

MasterGaN1 – features
  • 600 V system-in-package integrating half-bridge gate driver and high-voltage power GaN transistors:
    • QFN 9 x 9 x 1 mm package
    • RDS(ON) = 150 mΩ
    • IDS(MAX) = 10 A
  • Reverse current capability
  • Zero reverse recovery loss
  • UVLO protection on Low-side and High-side
  • Internal bootstrap diode
  • Interlocking function
  • Accurate internal timing match
  • 3.3 V to 15 V compatible inputs with hysteresis and pull-down
  • Overtemperature protection
  • Bill of material reduction
  • Very compact and simplified layout
  • Flexible, easy and fast design.

MasterGaN2 – description

The MASTERGAN2 is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN transistors in asymmetrical half‑bridge configuration. The integrated power GaNs have 650 V drain‑source blocking voltage and RDS(ON) of 150 m and 225 mΩ for Low side and High side respectively, while the High-side of the embedded gate driver can be easily supplied by the integrated bootstrap diode.

MasterGaN2 – features
  • 600 V system-in-package integrating half-bridge gate driver and high-voltage power GaN transistors:
    • QFN 9 x 9 x 1 mm package
    • RDS(ON) = 150 mΩ (LS) + 225 mΩ (HS)
    • IDS(MAX) = 10 A (LS) + 6.5 A (HS)
  • Reverse current capability
  • Zero reverse recovery loss
  • UVLO protection on Low-side and High-side
  • Internal bootstrap diode
  • Interlocking function
  • Dedicated pin for shutdown functionality
  • Accurate internal timing match
  • 3.3 V to 15 V compatible inputs with hysteresis and pull-down
  • Overtemperature protection
  • Bill of material reduction
  • Very compact and simplified layout
  • Flexible, easy and fast design.
 Key Applications
  • Switch-mode power supplies
  • Fast chargers
  • USB-PD adapters
  • High-voltage PFC, DC-DC and DC-AC converters
  • UPS systems
  • Solar power
  • LED lighting
  • industrial power supplies.

For purchase or more information please contact us at zakupy@masters.com.pl